Electrical properties of rapid thermally annealed SiNx:H/Si structures characterized by capacitance-voltage and surface photovoltage spectroscopy

  1. Martínez, F.L.
  2. Del Prado, A.
  3. Mártil, I.
  4. González-Díaz, G.
  5. Kliefoth, K.
  6. Füssel, W.
Revue:
Semiconductor Science and Technology

ISSN: 0268-1242

Année de publication: 2001

Volumen: 16

Número: 7

Pages: 534-542

Type: Article

DOI: 10.1088/0268-1242/16/7/302 GOOGLE SCHOLAR
La source de données: Scopus