Fabricación de fotoelectrodos transparentes de SnO2 y caracterizaciones estructural y eléctrica

  1. José María López García
  2. Salvador Ángel Gómez Lopera 1
  1. 1 Universidad Politécnica de Cartagena
    info

    Universidad Politécnica de Cartagena

    Cartagena, España

    ROR https://ror.org/02k5kx966

Journal:
Anuario de Jóvenes Investigadores

ISSN: 2386-3676

Year of publication: 2016

Volume: 9

Pages: 176-179

Type: Article

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Abstract

Fluorine doped tin dioxide (SnO 2 :F) transparent photoelectrodes w ere manufactured over glass substrates of 18.75 cm 2 surface and 1.2 mm thick by spray pyrolys is method. It was grown films of approximately 500 nm thick for different values of [F]/[Sn] (0%, 10%, 15%, 16%, 19%, 20%). Conductive films have a high crystallinity which coincid es with tin dioxide pattern (rutile tetragonal structure). Surface resistance and resistivity are minimal for the 16% doped samp le with respective values 3.05±0.12 Ω cm  2 y (12±6) 10  5 Ω m.

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