Kinetics and Compositional Dependence on the Microwave Power and SiH4/N2 Flow Ratio of Silicon Nitride Deposited by Electron Cyclotron Resonance Plasmas

  1. Hernandez, M.J.
  2. Piqueras, J.
  3. Garrido, J.
  4. Martinez, J.
Aldizkaria:
Journal of the Electrochemical Society

ISSN: 1945-7111,  0013-4651

Argitalpen urtea: 1994

Alea: 141

Zenbakia: 11

Orrialdeak: 3234-3237

Mota: Artikulua

DOI: 10.1149/1.2059309 GOOGLE SCHOLAR
Datuen iturria: Scopus