Electrical characteristics of aligned and transversally recrystallized SOI-MOS transistors

  1. Sanchez, G.
  2. Garrido, J.
  3. Martinez, J.
  4. Piqueras, J.
  5. Lora, E.
  6. Dominguez, C.
Revue:
Solid State Electronics

ISSN: 0038-1101

Année de publication: 1992

Volumen: 35

Número: 10

Pages: 1447-1450

Type: Article

DOI: 10.1016/0038-1101(92)90081-M GOOGLE SCHOLAR
La source de données: Scopus