ETS de Ingeniería de Telecomunicación
Centro
Helmholtz-Zentrum Berlin
Berlin, AlemaniaPublicaciones en colaboración con investigadores/as de Helmholtz-Zentrum Berlin (11)
2008
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Physical properties of high pressure reactively sputtered hafnium oxide
Vacuum, Vol. 82, Núm. 12, pp. 1391-1394
2007
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High-pressure reactively sputtered Hf O2: Composition, morphology, and optical properties
Journal of Applied Physics, Vol. 102, Núm. 4
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Optical properties and structure of HfO2 thin films grown by high pressure reactive sputtering
Journal of Physics D: Applied Physics, Vol. 40, Núm. 17, pp. 5256-5265
2006
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Compositional analysis of polycrystalline hafnium oxide thin films by heavy-ion elastic recoil detection analysis
Thin Solid Films, Vol. 515, Núm. 2 SPEC. ISS., pp. 695-699
2003
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Optical and structural properties of SiOxNyHz films deposited by electron cyclotron resonance and their correlation with composition
Journal of Applied Physics, Vol. 93, Núm. 11, pp. 8930-8938
2002
2001
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Electrical properties of rapid thermally annealed SiNx:H/Si structures characterized by capacitance-voltage and surface photovoltage spectroscopy
Semiconductor Science and Technology, Vol. 16, Núm. 7, pp. 534-542
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Molecular models and activation energies for bonding rearrangement in plasma-deposited (formula presented) dielectric thin films treated by rapid thermal annealing
Physical Review B - Condensed Matter and Materials Physics, Vol. 63, Núm. 24
2000
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Compositional analysis of amorphous SiNx:H films by ERDA and infrared spectroscopy
Surface and Interface Analysis, Vol. 30, Núm. 1, pp. 534-537
1999
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Thermally induced changes in the optical properties of SiNx:H films deposited by the electron cyclotron resonance plasma method
Journal of Applied Physics, Vol. 86, Núm. 4, pp. 2055-2061
1998
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Influence of rapid thermal annealing processes on the properties of SiNx:H films deposited by the electron cyclotron resonance method
Journal of Non-Crystalline Solids, Vol. 227-230, Núm. PART 1, pp. 523-527