Defect levels in monocrystalline and polycrystalline silicon MOS devices: A comparison

  1. Garcia, B.J.
  2. Martinez, J.
  3. Piqueras, J.
Revue:
Journal of Physics D: Applied Physics

ISSN: 0022-3727

Année de publication: 1985

Volumen: 18

Número: 4

Pages: 661-670

Type: Article

DOI: 10.1088/0022-3727/18/4/010 GOOGLE SCHOLAR
La source de données: Scopus