Publicaciones en las que colabora con Alvaro del Prado Millán (21)

2008

  1. Physical properties of high pressure reactively sputtered hafnium oxide

    Vacuum, Vol. 82, Núm. 12, pp. 1391-1394

2007

  1. High-pressure reactively sputtered Hf O2: Composition, morphology, and optical properties

    Journal of Applied Physics, Vol. 102, Núm. 4

2004

  1. Bonding structure and hydrogen content in silicon nitride thin films deposited by the electron cyclotron resonance plasma method

    Thin Solid Films

2003

  1. Characterization of nitrogen-rich silicon nitride films grown by the electron cyclotron resonance plasma technique

    Semiconductor Science and Technology, Vol. 18, Núm. 7, pp. 633-641

  2. Microstructural modifications induced by rapid thermal annealing in plasma deposited SiOxNyHz films

    Journal of Applied Physics, Vol. 94, Núm. 2, pp. 1019-1029

  3. Optical and structural properties of SiOxNyHz films deposited by electron cyclotron resonance and their correlation with composition

    Journal of Applied Physics, Vol. 93, Núm. 11, pp. 8930-8938

  4. Rapid thermal annealing effects on the electrical behavior of plasma oxidized silicon/silicon nitride stacks gate insulators

    Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

  5. Rapid thermally annealed plasma deposited SiNx:H thin films: Application to metal-insulator-semiconductor structures with Si, In 0.53Ga0.47 As, and InP

    Journal of Applied Physics, Vol. 94, Núm. 4, pp. 2642-2653

2002

  1. Composition and optical properties of silicon oxynitride films deposited by electron cyclotron resonance

    Vacuum

  2. Physical properties of plasma deposited SiOx thin films

    Vacuum

  3. Rapid thermal annealing effects on plasma deposited SiOx:H films

    Vacuum

2001

  1. Electrical properties of rapid thermally annealed SiNx:H/Si structures characterized by capacitance-voltage and surface photovoltage spectroscopy

    Semiconductor Science and Technology, Vol. 16, Núm. 7, pp. 534-542

  2. Molecular models and activation energies for bonding rearrangement in plasma-deposited (formula presented) dielectric thin films treated by rapid thermal annealing

    Physical Review B - Condensed Matter and Materials Physics, Vol. 63, Núm. 24

  3. Molecular models and activation energies for bonding rearrangement in plasma-deposited α-SiNx: H dielectric thin films treated by rapid thermal annealing

    Physical Review B - Condensed Matter and Materials Physics, Vol. 63, Núm. 24, pp. 2453201-2453211

  4. Temperature effects on the electrical properties and structure of interfacial and bulk defects in Al/SiNx:H/Si devices

    Journal of Applied Physics, Vol. 90, Núm. 3, pp. 1573-1581

2000

  1. Compositional analysis of amorphous SiNx:H films by ERDA and infrared spectroscopy

    Surface and Interface Analysis, Vol. 30, Núm. 1, pp. 534-537

  2. Defect structure of SiNx:H films and its evolution with annealing temperature

    Journal of Applied Physics, Vol. 88, Núm. 4, pp. 2149-2151

  3. Rapid thermal annealing effects on the structural properties and density of defects in SiO2 and SiNx: H films deposited by electron cyclotron resonance

    Journal of Applied Physics, Vol. 87, Núm. 3, pp. 1187-1192

1999

  1. Effect of substrate temperature in SiOxNy films deposited by electron cyclotron resonance

    Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 17, Núm. 4, pp. 1263-1268

  2. Thermal stability of a-SiNx:H films deposited by plasma electron cyclotron resonance

    Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 17, Núm. 4, pp. 1280-1284