Felix Lorenzo
Martínez Viviente
Catedrático de Universidad
Universidad Complutense de Madrid
Madrid, EspañaPublicacions en col·laboració amb investigadors/es de Universidad Complutense de Madrid (26)
2008
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Physical properties of high pressure reactively sputtered hafnium oxide
Vacuum, Vol. 82, Núm. 12, pp. 1391-1394
2007
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Optical properties and structure of HfO2 thin films grown by high pressure reactive sputtering
Journal of Physics D: Applied Physics, Vol. 40, Núm. 17, pp. 5256-5265
2006
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Compositional analysis of polycrystalline hafnium oxide thin films by heavy-ion elastic recoil detection analysis
Thin Solid Films, Vol. 515, Núm. 2 SPEC. ISS., pp. 695-699
2004
2003
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Characterization of nitrogen-rich silicon nitride films grown by the electron cyclotron resonance plasma technique
Semiconductor Science and Technology, Vol. 18, Núm. 7, pp. 633-641
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Microstructural modifications induced by rapid thermal annealing in plasma deposited SiOxNyHz films
Journal of Applied Physics, Vol. 94, Núm. 2, pp. 1019-1029
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Optical and structural properties of SiOxNyHz films deposited by electron cyclotron resonance and their correlation with composition
Journal of Applied Physics, Vol. 93, Núm. 11, pp. 8930-8938
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Rapid thermal annealing effects on the electrical behavior of plasma oxidized silicon/silicon nitride stacks gate insulators
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
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Rapid thermally annealed plasma deposited SiNx:H thin films: Application to metal-insulator-semiconductor structures with Si, In 0.53Ga0.47 As, and InP
Journal of Applied Physics, Vol. 94, Núm. 4, pp. 2642-2653
2002
2001
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Electrical properties of rapid thermally annealed SiNx:H/Si structures characterized by capacitance-voltage and surface photovoltage spectroscopy
Semiconductor Science and Technology, Vol. 16, Núm. 7, pp. 534-542
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Lattice recovery by rapid thermal annealing in Mg+-implanted InP assessed by Raman spectroscopy
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
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Molecular models and activation energies for bonding rearrangement in plasma-deposited (formula presented) dielectric thin films treated by rapid thermal annealing
Physical Review B - Condensed Matter and Materials Physics, Vol. 63, Núm. 24
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Molecular models and activation energies for bonding rearrangement in plasma-deposited α-SiNx: H dielectric thin films treated by rapid thermal annealing
Physical Review B - Condensed Matter and Materials Physics, Vol. 63, Núm. 24, pp. 2453201-2453211
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Temperature effects on the electrical properties and structure of interfacial and bulk defects in Al/SiNx:H/Si devices
Journal of Applied Physics, Vol. 90, Núm. 3, pp. 1573-1581
2000
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Compositional analysis of amorphous SiNx:H films by ERDA and infrared spectroscopy
Surface and Interface Analysis, Vol. 30, Núm. 1, pp. 534-537
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Defect structure of SiNx:H films and its evolution with annealing temperature
Journal of Applied Physics, Vol. 88, Núm. 4, pp. 2149-2151
1999
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Effect of substrate temperature in SiOxNy films deposited by electron cyclotron resonance
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 17, Núm. 4, pp. 1263-1268