![Foto de Javier](/img/nophoto.png)
Javier
Garrido Salas
Publicaciones en las que colabora con Javier Garrido Salas (14)
1999
-
Hydrogen incorporation and crystallization of nanocrystalline silicon deposited by electron cyclotron resonance plasmas
Journal of the Electrochemical Society, Vol. 146, Núm. 5, pp. 1966-1970
-
Kinetic and electrical characterization of thin silicon oxide films obtained by electron cyclotron resonance plasma
Journal of Materials Science: Materials in Electronics, Vol. 10, Núm. 5, pp. 393-398
1997
-
Compositional and electrical properties of ECR-CVD silicon oxynitrides
Semiconductor Science and Technology, Vol. 12, Núm. 7, pp. 927-932
-
Passivation, structural modification, and etching of amorphous silicon in hydrogen plasmas
Journal of Applied Physics, Vol. 81, Núm. 11, pp. 7612-7618
1996
-
Electrical properties of electron cyclotron resonance plasma-deposited silicon dioxide: Effect of the oxygen to silane flow ratio
Semiconductor Science and Technology, Vol. 11, Núm. 3, pp. 422-426
-
Rapid solid phase crystallization of nanocrystalline silicon deposited by electron cyclotron plasma chemical vapor deposition
Applied Physics Letters, Vol. 69, Núm. 13, pp. 1873-1875
-
Rapid thermal annealing behavior of amorphous SiC layers deposited by electron cyclotron resonance plasma
Journal of the Electrochemical Society, Vol. 143, Núm. 1, pp. 271-277
-
Scanning electron beam annealing of sputter-deposited titanium on silicon
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 118, Núm. 1-4, pp. 733-738
-
Temperature evolution during scanning electron beam processing of silicon
Applied Physics A: Materials Science and Processing, Vol. 62, Núm. 5, pp. 451-457
1995
-
Amorphous SiC layers deposited by electron cyclotron resonance plasma: spectroscopic ellipsometric measurements
Journal of Non-Crystalline Solids, Vol. 191, Núm. 1-2, pp. 164-173
-
Regrowth-process study of amorphous BF2+ ion-implanted silicon layers through spectroscopic ellipsometry
Applied Physics A Materials Science & Processing, Vol. 60, Núm. 3, pp. 325-332
1992
-
Electrical characteristics of aligned and transversally recrystallized SOI-MOS transistors
Solid State Electronics, Vol. 35, Núm. 10, pp. 1447-1450
1991
-
Direct Writing Laser Doping from Spun-On Glasses
Journal of the Electrochemical Society, Vol. 138, Núm. 10, pp. 3039-3042
1988
-
Electronic defect levels in continuous wave laser annealed silicon metal oxide semiconductor devices
Journal of Applied Physics, Vol. 64, Núm. 6, pp. 3079-3084