Publikationen, an denen er mitarbeitet Javier Garrido Salas (14)

1999

  1. Hydrogen incorporation and crystallization of nanocrystalline silicon deposited by electron cyclotron resonance plasmas

    Journal of the Electrochemical Society, Vol. 146, Núm. 5, pp. 1966-1970

  2. Kinetic and electrical characterization of thin silicon oxide films obtained by electron cyclotron resonance plasma

    Journal of Materials Science: Materials in Electronics, Vol. 10, Núm. 5, pp. 393-398

1997

  1. Compositional and electrical properties of ECR-CVD silicon oxynitrides

    Semiconductor Science and Technology, Vol. 12, Núm. 7, pp. 927-932

  2. Passivation, structural modification, and etching of amorphous silicon in hydrogen plasmas

    Journal of Applied Physics, Vol. 81, Núm. 11, pp. 7612-7618

1996

  1. Electrical properties of electron cyclotron resonance plasma-deposited silicon dioxide: Effect of the oxygen to silane flow ratio

    Semiconductor Science and Technology, Vol. 11, Núm. 3, pp. 422-426

  2. Rapid solid phase crystallization of nanocrystalline silicon deposited by electron cyclotron plasma chemical vapor deposition

    Applied Physics Letters, Vol. 69, Núm. 13, pp. 1873-1875

  3. Rapid thermal annealing behavior of amorphous SiC layers deposited by electron cyclotron resonance plasma

    Journal of the Electrochemical Society, Vol. 143, Núm. 1, pp. 271-277

  4. Scanning electron beam annealing of sputter-deposited titanium on silicon

    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 118, Núm. 1-4, pp. 733-738

  5. Temperature evolution during scanning electron beam processing of silicon

    Applied Physics A: Materials Science and Processing, Vol. 62, Núm. 5, pp. 451-457

1995

  1. Amorphous SiC layers deposited by electron cyclotron resonance plasma: spectroscopic ellipsometric measurements

    Journal of Non-Crystalline Solids, Vol. 191, Núm. 1-2, pp. 164-173

  2. Regrowth-process study of amorphous BF2+ ion-implanted silicon layers through spectroscopic ellipsometry

    Applied Physics A Materials Science & Processing, Vol. 60, Núm. 3, pp. 325-332

1992

  1. Electrical characteristics of aligned and transversally recrystallized SOI-MOS transistors

    Solid State Electronics, Vol. 35, Núm. 10, pp. 1447-1450

1991

  1. Direct Writing Laser Doping from Spun-On Glasses

    Journal of the Electrochemical Society, Vol. 138, Núm. 10, pp. 3039-3042

1988

  1. Electronic defect levels in continuous wave laser annealed silicon metal oxide semiconductor devices

    Journal of Applied Physics, Vol. 64, Núm. 6, pp. 3079-3084